BSP613PL6327HUSA1

Part NumberBSP613PL6327HUSA1

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 60V 2.9A SOT-223

DatasheetBSP613P

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 2.9A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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BSP613PL6327HUSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BSP613P

Standard Package

Manufacturer

Infineon Technologies

Series

SIPMOS®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

2.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

875pF @ 25V

FET Feature

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

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