BSP297H6327XTSA1
BSP297H6327XTSA1
Part Number BSP297H6327XTSA1 Description MOSFET N-CH 200V 660MA SOT-223 Package / Case TO-261-4, TO-261AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
To learn about the specification of BSP297H6327XTSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSP297H6327XTSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSP297H6327XTSA1.
We are offering BSP297H6327XTSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSP297H6327XTSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSP297 Standard Package 1 Manufacturer Infineon Technologies Series SIPMOS® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 660mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V Vgs(th) (Max) @ Id 1.8V @ 400µA Gate Charge (Qg) (Max) @ Vgs 16.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 357pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA
BSP297H6327XTSA1 - Related ProductsMore >>
2SK3745LS-1E ON Semiconductor, N-Channel 1500V 2A (Ta) 2W (Ta), 35W (Tc) Through Hole TO-220F-3FS,
View
MMBF170 ON Semiconductor, N-Channel 60V 500mA (Ta) 300mW (Ta) Surface Mount SOT-23,
View
STF7NM60N STMicroelectronics, N-Channel 600V 5A (Tc) 20W (Tc) Through Hole TO-220FP, MDmesh™ II
View
NX138BKR Nexperia USA Inc., N-Channel 60V 265mA (Ta) 310mW (Ta) Surface Mount TO-236AB,
View
TK31V60W5,LVQ Toshiba Semiconductor and Storage, N-Channel 600V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8), DTMOSIV
View
IRF7413TRPBF Infineon Technologies, N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
SIHF12N60E-E3 Vishay Siliconix, N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack,
View
BSC190N15NS3GATMA1 Infineon Technologies, N-Channel 150V 50A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
View
IPT059N15N3ATMA1 Infineon Technologies, N-Channel 150V 155A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™
View
FDA20N50-F109 ON Semiconductor, N-Channel 500V 22A (Tc) 280W (Tc) Through Hole TO-3PN, UniFET™
View
TPH4R008NH,L1Q Toshiba Semiconductor and Storage, N-Channel 80V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
View
TSM2N7002KCX RFG Taiwan Semiconductor Corporation, N-Channel 60V 300mA (Ta) 300mW (Ta) Surface Mount SOT-23,
View
BSP297H6327XTSA1 - Tags
English
