BSP149L6327HTSA1

Part NumberBSP149L6327HTSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 200V 660MA SOT-223

DatasheetBSP149

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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BSP149L6327HTSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BSP149

Standard Package

Manufacturer

Infineon Technologies

Series

SIPMOS®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

660mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

Rds On (Max) @ Id, Vgs

1.8Ohm @ 660mA, 10V

Vgs(th) (Max) @ Id

1V @ 400µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

430pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

1.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT223-4

Package / Case

TO-261-4, TO-261AA

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