BSM75GB170DN2HOSA1


BSM75GB170DN2HOSA1

Part NumberBSM75GB170DN2HOSA1

Manufacturer

Description

Datasheet

Package / CaseModule

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BSM75GB170DN2HOSA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Modules
Datasheet
Standard Package10
ManufacturerInfineon Technologies
Series-
Part StatusObsolete
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)110A
Power - Max625W
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 75A
Input Capacitance (Cies) @ Vce11nF @ 25V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

BSM75GB170DN2HOSA1 - Tags

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