BSM180D12P2C101

Part NumberBSM180D12P2C101

ManufacturerRohm Semiconductor

DescriptionMOSFET 2N-CH 1200V 180A MODULE

DatasheetBSM180D12P2C101 Datasheet

Package / CaseModule

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Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 204A (Tc) 1130W Module

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BSM180D12P2C101 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	BSM180D12P2C101 Datasheet
Standard Package	12
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Bulk
Part Status	Active
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	204A (Tc)
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	23000pF @ 10V
Power - Max	1130W
Operating Temperature	-40°C ~ 150°C (TJ)
Package / Case	Module
Supplier Device Package	Module

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