BSG0810NDIATMA1

Part NumberBSG0810NDIATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET 2N-CH 25V 19A/39A 8TISON

DatasheetBSG0810NDI

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) Asymmetrical 25V 19A, 39A 2.5W Surface Mount PG-TISON-8

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BSG0810NDIATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

BSG0810NDI

Standard Package

5000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

19A, 39A

Rds On (Max) @ Id, Vgs

3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1040pF @ 12V

Power - Max

2.5W

Operating Temperature

-55°C ~ 155°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

PG-TISON-8

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