BSC200P03LSGAUMA1

Part NumberBSC200P03LSGAUMA1

ManufacturerInfineon Technologies

DescriptionMOSFET P-CH 30V 12.5A TDSON-8

DatasheetBSC200P03LS G

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 9.9A (Ta), 12.5A (Tc) 2.5W (Ta), 63W (Tc) Surface Mount PG-TDSON-8-1

To learn about the specification of BSC200P03LSGAUMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSC200P03LSGAUMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSC200P03LSGAUMA1.
We are offering BSC200P03LSGAUMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

BSC200P03LSGAUMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BSC200P03LS G

Standard Package

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9.9A (Ta), 12.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

2.2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

48.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

2430pF @ 15V

FET Feature

Power Dissipation (Max)

2.5W (Ta), 63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

All categories