BSC159N10LSFGATMA1

Part NumberBSC159N10LSFGATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 63A TDSON-8

DatasheetBSC159N10LSF G

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 9.4A (Ta), 63A (Tc) 114W (Tc) Surface Mount PG-TDSON-8-1

To learn about the specification of BSC159N10LSFGATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSC159N10LSFGATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSC159N10LSFGATMA1.
We are offering BSC159N10LSFGATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

BSC159N10LSFGATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BSC159N10LSF G

Standard Package

5000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.4A (Ta), 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.4V @ 72µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 50V

FET Feature

Power Dissipation (Max)

114W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

All categories