BSC110N06NS3GATMA1
BSC110N06NS3GATMA1
Part Number BSC110N06NS3GATMA1
Description MOSFET N-CH 60V 50A TDSON-8
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5
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BSC110N06NS3GATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC110N06NS3 G
Standard Package 5000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 23µA
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 30V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-5
Package / Case 8-PowerTDFN
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