BSC0910NDIATMA1

Part NumberBSC0910NDIATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET 2N-CH 25V 16A/31A TISON8

DatasheetBSC0910NDI

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) Asymmetrical 25V 11A, 31A 1W Surface Mount PG-TISON-8

To learn about the specification of BSC0910NDIATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSC0910NDIATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSC0910NDIATMA1.
We are offering BSC0910NDIATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

BSC0910NDIATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

BSC0910NDI

Standard Package

5000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

11A, 31A

Rds On (Max) @ Id, Vgs

4.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

4500pF @ 12V

Power - Max

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

PG-TISON-8

All categories