BSC079N10NSGATMA1

Part NumberBSC079N10NSGATMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 100A TDSON-8

DatasheetBSC079N10NS G

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 13.4A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1

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BSC079N10NSGATMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BSC079N10NS G

Standard Package

5000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

13.4A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 110µA

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5900pF @ 50V

FET Feature

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

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