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BSC020N025S G


BSC020N025S G

Part NumberBSC020N025S G

Manufacturer

Description

Datasheet

Package / Case8-PowerTDFN

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Lead TimeTo be Confirmed

Detailed Description

BSC020N025S G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingCut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs66nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8290pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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