BSC019N02KSGAUMA1

Part NumberBSC019N02KSGAUMA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 20V 100A TDSON-8

DatasheetBSC019N02KS G

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 30A (Ta), 100A (Tc) 2.8W (Ta), 104W (Tc) Surface Mount PG-TDSON-8-1

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BSC019N02KSGAUMA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BSC019N02KS G

Standard Package

5000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

30A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

1.95mOhm @ 50A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 350µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

13000pF @ 10V

FET Feature

Power Dissipation (Max)

2.8W (Ta), 104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN

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