BSB165N15NZ3GXUMA1


BSB165N15NZ3GXUMA1

Part NumberBSB165N15NZ3GXUMA1

Manufacturer

Description

Datasheet

Package / Case3-WDSON

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BSB165N15NZ3GXUMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Rds On (Max) @ Id, Vgs16.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800pF @ 75V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 78W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON

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BSB165N15NZ3GXUMA1 - Tags

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