BSB104N08NP3GXUSA1

Part NumberBSB104N08NP3GXUSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 80V 13A 2WDSON

DatasheetBSB104N08NP3G

Package / Case3-WDSON

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 13A (Ta), 50A (Tc) 2.8W (Ta), 42W (Tc) Surface Mount MG-WDSON-2, CanPAK M™

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BSB104N08NP3GXUSA1 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BSB104N08NP3G

Standard Package

5000

Manufacturer

Infineon Technologies

Series

OptiMOS™

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 40V

FET Feature

Power Dissipation (Max)

2.8W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

MG-WDSON-2, CanPAK M™

Package / Case

3-WDSON

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