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BSB012N03LX3 G


BSB012N03LX3 G

Part NumberBSB012N03LX3 G

Manufacturer

Description

Datasheet

Package / Case3-WDSON

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BSB012N03LX3 G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingCut Tape (CT)
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C39A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs169nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds16900pF @ 15V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 89W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON

BSB012N03LX3 G - Tags

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