BS108,126

Part NumberBS108,126

ManufacturerNXP USA Inc.

DescriptionMOSFET N-CH 200V 300MA SOT54

DatasheetBS108

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 300mA (Ta) 1W (Ta) Through Hole TO-92-3

To learn about the specification of BS108,126, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BS108,126 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BS108,126.
We are offering BS108,126 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

BS108,126 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

BS108

Standard Package

2000

Manufacturer

NXP USA Inc.

Series

Packaging

Tape & Box (TB)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V

Rds On (Max) @ Id, Vgs

5Ohm @ 100mA, 2.8V

Vgs(th) (Max) @ Id

1.8V @ 1mA

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

FET Feature

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

All categories