Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	BFP740ESD
Standard Package	1
Manufacturer	Infineon Technologies
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.7V
Frequency - Transition	45GHz
Noise Figure (dB Typ @ f)	0.55dB ~ 1.8dB @ 150MHz ~ 10GHz
Gain	8.5dB ~30.5dB
Power - Max	160mW
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 25mA, 3V
Current - Collector (Ic) (Max)	45mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	SOT-343
Base Part Number	BFP740

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2SC5536A-TL-H	ON Semiconductor, RF Transistor NPN 12V 50mA 1.7GHz 100mW Surface Mount 3-SSFP,	View
BFP193E6327HTSA1	Infineon Technologies, RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT143-4,	View
BFP620H7764XTSA1	Infineon Technologies, RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount PG-SOT343-4,	View
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BFU530R	NXP USA Inc., RF Transistor NPN 12V 40mA 11GHz 450mW Surface Mount SOT-143B, Automotive, AEC-Q101	View
BFU660F,115	NXP USA Inc., RF Transistor NPN 5.5V 60mA 21GHz 225mW Surface Mount 4-DFP,	View

BFP740ESDH6327XTSA1

Part NumberBFP740ESDH6327XTSA1