BDV65B

Part NumberBDV65B

ManufacturerCentral Semiconductor Corp

DescriptionPOWER TRANSISTOR NPN TO218

DatasheetPower Transistors TO-218 Case General Purpose

Package / CaseTO-218-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 100V 12A 60MHz 125W Through Hole TO-218

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BDV65B - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

Power Transistors TO-218 Case General Purpose

Standard Package

Manufacturer

Central Semiconductor Corp

Series

Packaging

Bulk

Part Status

Obsolete

Transistor Type

NPN

Current - Collector (Ic) (Max)

12A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

Current - Collector Cutoff (Max)

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 5A, 4V

Power - Max

125W

Frequency - Transition

60MHz

Operating Temperature

Mounting Type

Through Hole

Package / Case

TO-218-3

Supplier Device Package

TO-218

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