BD810G


BD810G

Part NumberBD810G

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

BD810G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package50
ManufacturerON Semiconductor
Series-
PackagingTube
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)10A
Voltage - Collector Emitter Breakdown (Max)80V
Vce Saturation (Max) @ Ib, Ic1.1V @ 300mA, 3A
Current - Collector Cutoff (Max)1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 4A, 2V
Power - Max90W
Frequency - Transition1.5MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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