BD809G
BD809G
Part Number BD809G Description TRANS NPN 80V 10A TO-220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 80V 10A 1.5MHz 90W Through Hole TO-220AB
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BD809G - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet BD809,810 Standard Package 50 Manufacturer ON Semiconductor Series - Packaging Tube Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1.1V @ 300mA, 3A Current - Collector Cutoff (Max) 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A, 2V Power - Max 90W Frequency - Transition 1.5MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB
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PBSS4350X,146 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 50V 3A 100MHz 1.6W Surface Mount SOT-89,
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BSR43,115 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1.35W Surface Mount SOT-89,
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2PD602AQL,215 Nexperia USA Inc., Bipolar (BJT) Transistor NPN 50V 500mA 140MHz 250mW Surface Mount TO-236AB,
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STR1550 STMicroelectronics, Bipolar (BJT) Transistor NPN 500V 500mA 500mW Surface Mount SOT-23,
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