BD809G
BD809G
Part Number BD809G
Description TRANS NPN 80V 10A TO-220AB
Package / Case TO-220-3
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Detailed Description Bipolar (BJT) Transistor NPN 80V 10A 1.5MHz 90W Through Hole TO-220AB
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BD809G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet BD809,810
Standard Package 50
Manufacturer ON Semiconductor
Series -
Packaging Tube
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 1.1V @ 300mA, 3A
Current - Collector Cutoff (Max) 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A, 2V
Power - Max 90W
Frequency - Transition 1.5MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
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