BD13916S
BD13916S
Part Number BD13916S Description TRANS NPN 80V 1.5A TO-126 Package / Case TO-225AA, TO-126-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126-3
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BD13916S - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet BD135/137/139 Standard Package 2000 Manufacturer ON Semiconductor Series - Packaging Bulk Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1.5A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V Power - Max 1.25W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-126-3 Base Part Number BD139
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BCP56-16TX Nexperia USA Inc., Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1.35W Surface Mount SC-73, Automotive, AEC-Q101
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2N3440 Central Semiconductor Corp, Bipolar (BJT) Transistor NPN 250V 15MHz Through Hole TO-39,
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2SC3838KT146N Rohm Semiconductor, Bipolar (BJT) Transistor NPN 11V 50mA 3.2GHz 200mW Surface Mount SMT3,
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MJD44H11-1G ON Semiconductor, Bipolar (BJT) Transistor NPN 80V 8A 85MHz 1.75W Through Hole I-PAK,
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