BC847CDW1T1G

Part NumberBC847CDW1T1G

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Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays
Datasheet	BC84(6, 7)BDW1T1, BC848CDW1T1
Standard Package	1
Manufacturer	ON Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	45V
Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	420 @ 2mA, 5V
Power - Max	380mW
Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363
Base Part Number	BC847CD

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ULN2801A	STMicroelectronics, Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP,	View
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STA303A	Sanken, Bipolar (BJT) Transistor Array 3 NPN Darlington (Emitter Coupled) 100V 4A 3W Through Hole 8-SIP,	View
SN75469N	Texas Instruments, Bipolar (BJT) Transistor Array 7 NPN Darlington 100V 500mA Through Hole 16-PDIP,	View

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