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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet BC846(A,B), BC847(A,B,C), BC848(A,B,C)
Standard Package 3000
Manufacturer Taiwan Semiconductor Corporation
Series -
Packaging Tape & Reel (TR)
Part Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 200mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
PMBTA42,185
Nexperia USA Inc., Bipolar (BJT) Transistor NPN 300V 100mA 50MHz 250mW Surface Mount TO-236AB, Automotive, AEC-Q101
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Diodes Incorporated, Bipolar (BJT) Transistor NPN 12V 1.5A 260MHz 300mW Surface Mount SOT-323,
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ON Semiconductor, Bipolar (BJT) Transistor NPN - Darlington 80V 10A 2W Through Hole TO-220AB,
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Toshiba Semiconductor and Storage, Bipolar (BJT) Transistor NPN 50V 150mA 80MHz 150mW Surface Mount TO-236,
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ON Semiconductor, Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Surface Mount DPAK,
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Central Semiconductor Corp, Bipolar (BJT) Transistor NPN - Darlington 40V 300mA 60MHz 625mW Through Hole TO-92,
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ON Semiconductor, Bipolar (BJT) Transistor NPN 80V 4A 2MHz 40W Through Hole TO-225AA,
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