APTGT75DH120T3G

Part NumberAPTGT75DH120T3G

ManufacturerMicrosemi Corporation

DescriptionMOD IGBT 1200V 110A SP3

DatasheetAPTGT75DH120T3G

Package / CaseSP3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Field Stop Asymmetrical Bridge 1200V 110A 357W Chassis Mount SP3

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APTGT75DH120T3G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

APTGT75DH120T3G

Standard Package

Manufacturer

Microsemi Corporation

Series

Part Status

Active

IGBT Type

Trench Field Stop

Configuration

Asymmetrical Bridge

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

110A

Power - Max

357W

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Current - Collector Cutoff (Max)

250µA

Input Capacitance (Cies) @ Vce

5.34nF @ 25V

Input

Standard

NTC Thermistor

Yes

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP3

Supplier Device Package

SP3

All categories

APTGT75DH120T3G

Part NumberAPTGT75DH120T3G

ManufacturerMicrosemi Corporation

DescriptionMOD IGBT 1200V 110A SP3

DatasheetAPTGT75DH120T3G

Package / CaseSP3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Field Stop Asymmetrical Bridge 1200V 110A 357W Chassis Mount SP3

APTGT75DH120T3G - Product Attributes

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