APTGT50DH60T1G

Part NumberAPTGT50DH60T1G

ManufacturerMicrosemi Corporation

DescriptionMOD IGBT 600V 80A SP1

DatasheetAPTGT50DH60T1G

Package / CaseSP1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Field Stop Asymmetrical Bridge 600V 80A 176W Chassis Mount SP1

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APTGT50DH60T1G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Modules

Datasheet

APTGT50DH60T1G

Standard Package

Manufacturer

Microsemi Corporation

Series

Part Status

Active

IGBT Type

Trench Field Stop

Configuration

Asymmetrical Bridge

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

80A

Power - Max

176W

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 50A

Current - Collector Cutoff (Max)

250µA

Input Capacitance (Cies) @ Vce

3.15nF @ 25V

Input

Standard

NTC Thermistor

Yes

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP1

Supplier Device Package

SP1

All categories

APTGT50DH60T1G

Part NumberAPTGT50DH60T1G

ManufacturerMicrosemi Corporation

DescriptionMOD IGBT 600V 80A SP1

DatasheetAPTGT50DH60T1G

Package / CaseSP1

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT Module Trench Field Stop Asymmetrical Bridge 600V 80A 176W Chassis Mount SP1

APTGT50DH60T1G - Product Attributes

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