APT70GR65B2DU40

Part NumberAPT70GR65B2DU40

ManufacturerMicrosemi Corporation

DescriptionINSULATED GATE BIPOLAR TRANSISTO

DatasheetAPT70GR65B2DU40

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT NPT 650V 134A 595W Through Hole T-MAX™ [B2]

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APT70GR65B2DU40 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Single

Datasheet

APT70GR65B2DU40

Standard Package

Manufacturer

Microsemi Corporation

Series

Packaging

Bulk

Part Status

Active

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

134A

Current - Collector Pulsed (Icm)

280A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 70A

Power - Max

595W

Input Type

Standard

Gate Charge

305nC

Td (on/off) @ 25°C

18ns/170ns

Test Condition

433V, 70A, 4.3Ohm, 15V

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

T-MAX™ [B2]

All categories

APT70GR65B2DU40

Part NumberAPT70GR65B2DU40

ManufacturerMicrosemi Corporation

DescriptionINSULATED GATE BIPOLAR TRANSISTO

DatasheetAPT70GR65B2DU40

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT NPT 650V 134A 595W Through Hole T-MAX™ [B2]

APT70GR65B2DU40 - Product Attributes

APT70GR65B2DU40 - Tags