APT65GP60B2G
APT65GP60B2G
Part Number APT65GP60B2G
Description IGBT 600V 100A 833W TMAX
Package / Case TO-247-3 Variant
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Lead Time To be Confirmed
Detailed Description IGBT PT 600V 100A 833W Through Hole
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APT65GP60B2G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet APT65GP60B2
Standard Package 1
Manufacturer Microsemi Corporation
Series POWER MOS 7®
Packaging Tube
Part Status Not For New Designs
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 100A
Current - Collector Pulsed (Icm) 250A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 65A
Power - Max 833W
Switching Energy 605µJ (on), 896µJ (off)
Input Type Standard
Gate Charge 210nC
Td (on/off) @ 25°C 30ns/91ns
Test Condition 400V, 65A, 5Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3 Variant
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