APT65GP60B2G
APT65GP60B2G
Part Number APT65GP60B2G Description IGBT 600V 100A 833W TMAX Package / Case TO-247-3 VariantUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description IGBT PT 600V 100A 833W Through Hole
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APT65GP60B2G - Product Attributes
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Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet APT65GP60B2 Standard Package 1 Manufacturer Microsemi Corporation Series POWER MOS 7® Packaging Tube Part Status Not For New Designs IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 100A Current - Collector Pulsed (Icm) 250A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 65A Power - Max 833W Switching Energy 605µJ (on), 896µJ (off) Input Type Standard Gate Charge 210nC Td (on/off) @ 25°C 30ns/91ns Test Condition 400V, 65A, 5Ohm, 15V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Variant
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