APT50GP60B2DQ2G

Part NumberAPT50GP60B2DQ2G

ManufacturerMicrosemi Corporation

DescriptionIGBT 600V 150A 625W TMAX

DatasheetAPT50GP60B2DQ2(G)

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT PT 600V 150A 625W Through Hole

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APT50GP60B2DQ2G - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Single

Datasheet

APT50GP60B2DQ2(G)

Standard Package

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

Packaging

Tube

Part Status

Not For New Designs

IGBT Type

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

150A

Current - Collector Pulsed (Icm)

190A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Power - Max

625W

Switching Energy

465µJ (on), 635µJ (off)

Input Type

Standard

Gate Charge

165nC

Td (on/off) @ 25°C

19ns/85ns

Test Condition

400V, 50A, 4.3Ohm, 15V

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3 Variant

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