APT45GR65B2DU30

Part NumberAPT45GR65B2DU30

ManufacturerMicrosemi Corporation

DescriptionINSULATED GATE BIPOLAR TRANSISTO

DatasheetAPT45GR65B2DU30

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT NPT 650V 118A 543W Through Hole T-MAX™ [B2]

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APT45GR65B2DU30 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - IGBTs - Single

Datasheet

APT45GR65B2DU30

Standard Package

Manufacturer

Microsemi Corporation

Series

Packaging

Bulk

Part Status

Active

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

118A

Current - Collector Pulsed (Icm)

224A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 45A

Power - Max

543W

Input Type

Standard

Gate Charge

203nC

Td (on/off) @ 25°C

15ns/100ns

Test Condition

433V, 45A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

80ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

T-MAX™ [B2]

All categories

APT45GR65B2DU30

Part NumberAPT45GR65B2DU30

ManufacturerMicrosemi Corporation

DescriptionINSULATED GATE BIPOLAR TRANSISTO

DatasheetAPT45GR65B2DU30

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionIGBT NPT 650V 118A 543W Through Hole T-MAX™ [B2]

APT45GR65B2DU30 - Product Attributes

APT45GR65B2DU30 - Tags