APT35GP120B2DQ2G


APT35GP120B2DQ2G

Part NumberAPT35GP120B2DQ2G

Manufacturer

Description

Datasheet

Package / CaseTO-247-3 Variant

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

APT35GP120B2DQ2G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
PackagingTube
Part StatusActive
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)96A
Current - Collector Pulsed (Icm)140A
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 35A
Power - Max543W
Switching Energy750µJ (on), 680µJ (off)
Input TypeStandard
Gate Charge150nC
Td (on/off) @ 25°C16ns/95ns
Test Condition600V, 35A, 4.3Ohm, 15V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant

APT35GP120B2DQ2G - Tags

APT35GP120B2DQ2G APT35GP120B2DQ2G PDF APT35GP120B2DQ2G datasheet APT35GP120B2DQ2G specification APT35GP120B2DQ2G image APT35GP120B2DQ2G India Renesas Electronics India APT35GP120B2DQ2G buy APT35GP120B2DQ2G APT35GP120B2DQ2G price APT35GP120B2DQ2G distributor APT35GP120B2DQ2G supplier APT35GP120B2DQ2G wholesales