APT25GP120BDQ1G
APT25GP120BDQ1G
Part Number APT25GP120BDQ1G
Description IGBT 1200V 69A 417W TO247
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description IGBT PT 1200V 69A 417W Through Hole TO-247 [B]
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APT25GP120BDQ1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet APT25GP120BDQ1(G)
Standard Package 1
Manufacturer Microsemi Corporation
Series POWER MOS 7®
Packaging Tube
Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 69A
Current - Collector Pulsed (Icm) 90A
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 25A
Power - Max 417W
Switching Energy 500µJ (on), 440µJ (off)
Input Type Standard
Gate Charge 110nC
Td (on/off) @ 25°C 12ns/70ns
Test Condition 600V, 25A, 5Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 [B]
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