APT25GP120BDQ1G
APT25GP120BDQ1G
Part Number APT25GP120BDQ1G Description IGBT 1200V 69A 417W TO247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description IGBT PT 1200V 69A 417W Through Hole TO-247 [B]
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APT25GP120BDQ1G - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet APT25GP120BDQ1(G) Standard Package 1 Manufacturer Microsemi Corporation Series POWER MOS 7® Packaging Tube Part Status Active IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 69A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 25A Power - Max 417W Switching Energy 500µJ (on), 440µJ (off) Input Type Standard Gate Charge 110nC Td (on/off) @ 25°C 12ns/70ns Test Condition 600V, 25A, 5Ohm, 15V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B]
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