APT13GP120BDQ1G


APT13GP120BDQ1G

Part NumberAPT13GP120BDQ1G

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

APT13GP120BDQ1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package1
ManufacturerMicrosemi Corporation
SeriesPOWER MOS 7®
PackagingTube
Part StatusActive
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)41A
Current - Collector Pulsed (Icm)50A
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 13A
Power - Max250W
Switching Energy115µJ (on), 165µJ (off)
Input TypeStandard
Gate Charge55nC
Td (on/off) @ 25°C9ns/28ns
Test Condition600V, 13A, 5Ohm, 15V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 [B]

APT13GP120BDQ1G - Tags

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