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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet AOD240
Standard Package 1
Manufacturer Alpha & Omega Semiconductor Inc.
Series -
Packaging Cut Tape (CT)
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 20V
FET Feature -
Power Dissipation (Max) 2.7W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRF1405ZSTRLPBF
Infineon Technologies, N-Channel 55V 75A (Tc) 230W (Tc) Surface Mount D2PAK, HEXFET®
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SIHH21N60E-T1-GE3
Vishay Siliconix, N-Channel 600V 20A (Tc) 104W (Tc) Surface Mount PowerPAK® 8 x 8,
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STD95N2LH5
STMicroelectronics, N-Channel 25V 80A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ V
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IRFR310TRPBF
Vishay Siliconix, N-Channel 400V 1.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
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IRFZ34NPBF
Infineon Technologies, N-Channel 55V 29A (Tc) 68W (Tc) Through Hole TO-220AB, HEXFET®
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DMN1004UFV-7
Diodes Incorporated, N-Channel 12V 70A (Tc) 1.9W (Ta) Surface Mount PowerDI3333-8,
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IXFT50N85XHV
IXYS, N-Channel 850V 50A (Tc) 890W (Tc) Surface Mount TO-268, HiPerFET™
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IRFU220PBF
Vishay Siliconix, N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,
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IRLB8314PBF
Infineon Technologies, N-Channel 30V 130A (Tc) 125W (Tc) Through Hole TO-220-3, HEXFET®
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DMTH4005SK3Q-13
Diodes Incorporated, N-Channel 40V 95A (Tc) 2.1W (Ta), 100W (Tc) Surface Mount TO-252 (DPAK), Automotive, AEC-Q101
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SQP90142E_GE3
Vishay Siliconix, N-Channel 200V 78.5A (Tc) 250W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, TrenchFET®
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STW12NK80Z
STMicroelectronics, N-Channel 800V 10.5A (Tc) 190W (Tc) Through Hole TO-247-3, SuperMESH™
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