3N163-E3


3N163-E3

Part Number3N163-E3

Manufacturer

Description

Datasheet

Package / CaseTO-206AF, TO-72-4 Metal Can

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

3N163-E3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package200
ManufacturerVishay Siliconix
Series-
PackagingBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs250Ohm @ 100µA, 20V
Vgs(th) (Max) @ Id5V @ 10µA
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3.5pF @ 15V
FET Feature-
Power Dissipation (Max)375mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-72
Package / CaseTO-206AF, TO-72-4 Metal Can

3N163-E3 - Tags

3N163-E3 3N163-E3 PDF 3N163-E3 datasheet 3N163-E3 specification 3N163-E3 image 3N163-E3 India Renesas Electronics India 3N163-E3 buy 3N163-E3 3N163-E3 price 3N163-E3 distributor 3N163-E3 supplier 3N163-E3 wholesales