2ST501T
2ST501T
Part Number 2ST501T Description TRANS NPN DARL 350V 4A TO-220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Bipolar (BJT) Transistor NPN - Darlington 350V 4A 100W Through Hole TO-220AB
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2ST501T - Product Attributes
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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2ST501T Standard Package 50 Manufacturer STMicroelectronics Series - Packaging Tube Part Status Active Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 350V Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 2A Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V Power - Max 100W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB
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BC817K-16HVL Nexperia USA Inc., Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 350mW Surface Mount TO-236AB, Automotive, AEC-Q101
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KSP06TA ON Semiconductor, Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 625mW Through Hole TO-92-3,
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PMBTA14,215 Nexperia USA Inc., Bipolar (BJT) Transistor NPN - Darlington 30V 500mA 125MHz 250mW Surface Mount TO-236AB,
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BCV47-TP Micro Commercial Co, Bipolar (BJT) Transistor NPN - Darlington 60V 500mA 170MHz 300mW Surface Mount SOT-23,
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