2SK3662(F)

Part Number2SK3662(F)

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET N-CH 60V 35A TO220NIS

Datasheet2SK3662

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 35A (Ta) 35W (Tc) Through Hole TO-220NIS

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2SK3662(F) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

2SK3662

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIII

Packaging

Bulk

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

35A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

12.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5120pF @ 10V

FET Feature

Power Dissipation (Max)

35W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220NIS

Package / Case

TO-220-3 Full Pack

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