2SK3132(Q)


2SK3132(Q)

Part Number2SK3132(Q)

Manufacturer

Description

Datasheet

Package / CaseTO-3PL

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SK3132(Q) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package25
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs95mOhm @ 25A, 10V
Vgs(th) (Max) @ Id3.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs280nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds11000pF @ 10V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(L)
Package / CaseTO-3PL

2SK3132(Q) - Tags

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