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2SK2009TE85LF


2SK2009TE85LF

Part Number2SK2009TE85LF

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SK2009TE85LF - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V
Rds On (Max) @ Id, Vgs2Ohm @ 50MA, 2.5V
Vgs(th) (Max) @ Id1.5V @ 100µA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds70pF @ 3V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-59-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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2SK2009TE85LF - Tags

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