2SJ380(F)

Part Number2SJ380(F)

ManufacturerToshiba Semiconductor and Storage

DescriptionMOSFET P-CH 100V 12A TO220NIS

Datasheet2SJ380

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 12A (Ta) 35W (Tc) Through Hole TO-220NIS

To learn about the specification of 2SJ380(F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add 2SJ380(F) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of 2SJ380(F).
We are offering 2SJ380(F) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

2SJ380(F) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

2SJ380

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tube

Part Status

Obsolete

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

210mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 10V

FET Feature

Power Dissipation (Max)

35W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220NIS

Package / Case

TO-220-3 Full Pack

All categories