2SD2257(Q,M)


2SD2257(Q,M)

Part Number2SD2257(Q,M)

Manufacturer

Description

Datasheet

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SD2257(Q,M) - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingBulk
Part StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)3A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 2A, 2V
Power - Max2W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS

2SD2257(Q,M) - Tags

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