2SD2206(TE6,F,M)

Part Number2SD2206(TE6,F,M)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS NPN 2A 100V TO226-3

Datasheet2SD2206

Package / CaseTO-226-3, TO-92-3 Long Body

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor NPN 100V 2A 100MHz 900mW Through Hole TO-92MOD

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2SD2206(TE6,F,M) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2SD2206

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Bulk

Part Status

Obsolete

Transistor Type

NPN

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 1mA, 1A

Current - Collector Cutoff (Max)

10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 1A, 2V

Power - Max

900mW

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

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