2SD2012-BP


2SD2012-BP

Part Number2SD2012-BP

Manufacturer

Description

Datasheet

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

2SD2012-BP - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1000
ManufacturerMicro Commercial Co
Series-
Part StatusLast Time Buy
Transistor TypeNPN
Current - Collector (Ic) (Max)3A
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 500mA, 5V
Power - Max2W
Frequency - Transition3MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

2SD2012-BP - Tags

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