2SC6042,T2HOSH1Q(J

Part Number2SC6042,T2HOSH1Q(J

To learn about the specification of 2SC6042,T2HOSH1Q(J, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add 2SC6042,T2HOSH1Q(J with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of 2SC6042,T2HOSH1Q(J.
We are offering 2SC6042,T2HOSH1Q(J for competitive price in the global market, please send us a quota request for pricing. Thank you!

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	2SC6042
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Bulk
Part Status	Obsolete
Transistor Type	NPN
Current - Collector (Ic) (Max)	1A
Voltage - Collector Emitter Breakdown (Max)	375V
Vce Saturation (Max) @ Ib, Ic	1V @ 100mA, 800mA
Current - Collector Cutoff (Max)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Power - Max	1W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	SC-71
Supplier Device Package	MSTM