Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC5085
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	11dB ~ 16.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 20mA, 10V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

MMBTH24-7-F	Diodes Incorporated, RF Transistor NPN 40V 50mA 400MHz 300mW Surface Mount SOT-23-3,	View
BFP640FH6327XTSA1	Infineon Technologies, RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount 4-TSFP,	View
BFU660F,115	NXP USA Inc., RF Transistor NPN 5.5V 60mA 21GHz 225mW Surface Mount 4-DFP,	View
BFS483H6327XTSA1	Infineon Technologies, RF Transistor 2 NPN (Dual) 12V 65mA 8GHz 450mW Surface Mount PG-SOT363-6,	View
BFU550WX	NXP USA Inc., RF Transistor NPN 12V 50mA 11GHz 450mW Surface Mount SOT-323-3, Automotive, AEC-Q101	View
BFR93AWH6327XTSA1	Infineon Technologies, RF Transistor NPN 12V 90mA 6GHz 300mW Surface Mount PG-SOT323-3,	View
MT3S111(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini,	View
MAX2602ESA+	Maxim Integrated, RF Transistor NPN 15V 1.2A 1GHz 6.4W Surface Mount 8-SOIC-EP,	View
2SC2714-Y(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mount S-Mini,	View
BFU580GX	NXP USA Inc., RF Transistor NPN 12V 60mA 11GHz 1W Surface Mount SOT-223,	View
2SC5084-O(TE85L,F)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 150mW Surface Mount S-Mini,	View
MT3S20TU(TE85L)	Toshiba Semiconductor and Storage, RF Transistor NPN 12V 80mA 7GHz 900mW Surface Mount UFM,	View

2SC5085-Y(TE85L,F)

Part Number2SC5085-Y(TE85L,F)