Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF
Datasheet	2SC2714
Standard Package	3000
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	550MHz
Noise Figure (dB Typ @ f)	2.5dB @ 100MHz
Gain	23dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 1mA, 6V
Current - Collector (Ic) (Max)	20mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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BFS17WH6327XTSA1	Infineon Technologies, RF Transistor NPN 15V 25mA 1.4GHz 280mW Surface Mount PG-SOT323-3,	View
BFR92PE6327HTSA1	Infineon Technologies, RF Transistor NPN 15V 45mA 5GHz 280mW Surface Mount SOT-23-3,	View
BFU760F,115	NXP USA Inc., RF Transistor NPN 2.8V 70mA 45GHz 220mW Surface Mount 4-DFP,	View
15GN03CA-TB-E	ON Semiconductor, RF Transistor NPN 10V 70mA 1.5GHz 200mW Surface Mount 3-CP,	View
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BFU790F,115	NXP USA Inc., RF Transistor NPN 2.8V 100mA 25GHz 234mW Surface Mount 4-DFP,	View
BFP540ESDH6327XTSA1	Infineon Technologies, RF Transistor NPN 5V 80mA 30GHz 250mW Surface Mount PG-SOT343-4,	View
MAPR-000912-500S00	M/A-Com Technology Solutions, RF Transistor NPN 80V 52.5A 500W Chassis Mount,	View
BFU520XRR	NXP USA Inc., RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143R, Automotive, AEC-Q101	View
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2SC2714-O(TE85L,F)

Part Number2SC2714-O(TE85L,F)