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2SB906-Y(TE16L1,NQ

2SB906-Y(TE16L1,NQ

Part Number2SB906-Y(TE16L1,NQ

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PNP 60V 3A PW-MOLD

Datasheet2SB906

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 60V 3A 9MHz 1W Surface Mount PW-MOLD

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2SB906-Y(TE16L1,NQ - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	2SB906
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	3A
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	1.7V @ 300mA, 3A
Current - Collector Cutoff (Max)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 5V
Power - Max	1W
Frequency - Transition	9MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	PW-MOLD

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2SB906-Y(TE16L1,NQ - Tags

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