2SB1481(TOJS,Q,M)

Part Number2SB1481(TOJS,Q,M)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PNP 4A 100V TO220-3

Datasheet2SB1481

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 100V 4A 2W Through Hole TO-220NIS

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2SB1481(TOJS,Q,M) - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2SB1481

Standard Package

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Bulk

Part Status

Obsolete

Transistor Type

PNP

Current - Collector (Ic) (Max)

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 6mA, 3A

Current - Collector Cutoff (Max)

2µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

2000 @ 3A, 2V

Power - Max

Frequency - Transition

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

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