2SB1216S-E
2SB1216S-E
Part Number 2SB1216S-E
Description TRANS PNP 100V 4A TP
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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Lead Time To be Confirmed
Detailed Description Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Through Hole TP
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2SB1216S-E - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet 2SB1216/2SD1816
Standard Package 500
Manufacturer ON Semiconductor
Series -
Packaging Bulk
Part Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA, 5V
Power - Max 1W
Frequency - Transition 130MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Base Part Number 2SB1216
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