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2SB1216S-E

2SB1216S-E

Part Number2SB1216S-E

ManufacturerON Semiconductor

DescriptionTRANS PNP 100V 4A TP

Datasheet2SB1216/2SD1816

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Through Hole TP

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2SB1216S-E - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet	2SB1216/2SD1816
Standard Package	500
Manufacturer	ON Semiconductor
Series	-
Packaging	Bulk
Part Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	4A
Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	500mV @ 200mA, 2A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 500mA, 5V
Power - Max	1W
Frequency - Transition	130MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package	TP
Base Part Number	2SB1216

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2SB1216S-E - Tags

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