2SA1955FVBTPL3Z

Part Number2SA1955FVBTPL3Z

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS PNP 12V 0.4A VESM

Datasheet2SA1955F

Package / CaseSOT-723

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor PNP 12V 400mA 130MHz 100mW Surface Mount VESM

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2SA1955FVBTPL3Z - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single

Datasheet

2SA1955F

Standard Package

8000

Manufacturer

Toshiba Semiconductor and Storage

Series

Packaging

Tape & Reel (TR)

Part Status

Obsolete

Transistor Type

PNP

Current - Collector (Ic) (Max)

400mA

Voltage - Collector Emitter Breakdown (Max)

12V

Vce Saturation (Max) @ Ib, Ic

250mV @ 10mA, 200mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

300 @ 10mA, 2V

Power - Max

100mW

Frequency - Transition

130MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

VESM

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